Walkout in PHEMTs: Origin and Relation to Device Structure
نویسنده
چکیده
Parameter walkout of more than 250 power Al0.24Ga0.76As/In0.25Ga0.75As/GaAs double-recessed PHEMTs with different layout geometry and epitaxial structure has been experimentally measured and simulated. The relation between DC, small-signal and large-signal behavior has been recognized. The essential parameters of walkout were defined; their geometry and structural dependence have been derived. Possible methods of walkout control are discussed.
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تاریخ انتشار 2004